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Single Emitter Diode Laser Devices

(Non Visible)

Leveraging nXLT™ technology, nLIGHT’s non visible single emitter diode laser devices span the wavelength region from 808 to 2000 nm. With emitting apertures from 100 to 200 µm, and power levels up to 5 W, these devices offer a rare combination of high brightness and high reliability, enabling new applications.

Our non visible single emitter diode laser devices are available in c-mount and high-heat load (HHL) packages, and we offer a variety of lensing options to meet the specific needs of your application.


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  C-2.5-08xx C-3.0-08xx C-5.0-08xx
Optical
Center wavelength (Range)1 nm 790 - 825 808 808
CW output power W 2.5 3 5
Center wavelength tolerance nm ± 3 ± 3 ± 3
Emitter size μm 150 100 200
Spectral width (FWHM) nm < 3 < 3 < 3
Slope efficiency W / A > 1.1 > 1.1 > 1.1
Polarization TM or TE TM TM TM
Fast-axis divergence Degrees 36° 36° 36°
Slow-axis divergence Degrees 10° 10° 10°
Wavelength temperature coefficient nm / °C 0.28 0.28 0.28
Electrical
Power conversion efficiency % 54 55 54
Threshold current (ITH) mA 450 400 650
Operating current (IOP) mA 2500 2800 4800
Operating voltage (VOP) V 1.85 1.85 1.9
Series resistance (RS) Ω 0.12 0.12 0.12
Mechanical
Lead soldering temperature
(C-mount)
°C 250
(< 5 sec)
250
(< 5 sec)
250
(< 5 sec)
Lead soldering temperature (HHL) °C 250
(< 5 sec)
250
(< 5 sec)
250
(< 5 sec)
Thermal
Thermal resistance3 °C / W 10 10 10
Operating temperature range (C-mount)2 °C -20 to +30 -20 to +30 -20 to +30
Operating temperature range (HHL)2 °C -20 to +50 -20 to +50 -20 to +50
Storage temperature range °C -20 to +80 -20 to +80 -20 to +80
Thermoelectric cooler (HHL only)
Drive current (Typical) A 1.6 1.6 3.5
Drive voltage (Typical) V 3.0 3.0 5.5
Thermistor resistance (25 °C) 10 10 10
Monitor photodiode (HHL only)
Sensitivity MA/mW 1 to 10 1 to 10 1 to 10
Capacitance pF 6 6 6
Breakdown voltage V 25 25 25
Operating voltage V 10 10 10

  C-1.5-14xx C-1.0-15xx
Optical
Center wavelength (Range)1 nm 1400 - 1500 1500 - 1600
CW output power W 1.5 1
Center wavelength tolerance nm ± 5 ± 5
Emitter size μm 100 100
Spectral width (FWHM) nm < 10 < 10
Slope efficiency W / A > 0.4 > 0.4
Polarization TM or TE TE TE
Fast-axis divergence Degrees 27° 27°
Slow-axis divergence Degrees 10° 10°
Wavelength temperature coefficient nm / °C  0.4 0.4
Cavity length mm - 1
Electrical
Total conversion efficiency % 32 25
Threshold current (ITH) mA 450 700
Operating current (IOP) mA 3700 5000
Operating voltage (VOP) V 1.2 1.4
Series resistance (RS) Ω 0.15 0.12
Mechanical
Lead soldering temperature (C-mount) °C 250 (< 5 sec) 250 (< 5 sec)
Lead soldering temperature (HHL) °C 250 (< 5 sec) 250 (< 5 sec)
Thermal
Thermal resistance3 °C / W 10 10
Operating temperature range
(C-mount)2
°C -20 to +30 -20 to +30
Operating temperature range
(HHL)2
°C -20 to +50 -20 to +30
Storage temperature range °C -20 to +80 -20 to +80
Thermoelectric cooler (HHL only)
Drive current A 1.8
(Typical)
3.5
(Maximum) 
Drive voltage V 3.7
(Typical)
 8
(Maximum)
Thermistor resistance (25 °C) 10 10
Monitor photodiode (HHL only)
Sensitivity µA/mW 1 to 10 1
Capacitance pF 6 6
Breakdown voltage V 25 25
Operating voltage V 10 10
1 xxx denotes wavelength.
2 The wavelength temperature coefficient is the wavelength shift per °C change at the diode junction.
3  A non-condensing environment is required for storage and operation below the ambient dew point.

 

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