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Single Emitter Diode Laser Devices

(Visible)

Leveraging nXLT™ technology, nLIGHT’s visible single emitter diode laser devices span the wavelength region from 639 nm to 690 nm. The small emitting aperture of 150 µm, combined with low beam divergence, allows unparalleled brightness and reliability for a variety of applications with power levels ranging from 0.5 W to 1.5 W.

Our visible single emitter diode laser devices are available in c-mount and high-heat load (HHL) packages, and we offer a variety of lensing options to meet the specific needs of your application.


Download datasheet 		 

  C-0.75-0639 C-1.5-0665 C-1.5-0680 C-1.5-0690
Optical
Center wavelength nm 639 665 680 690
CW output power W 0.75 1.5 1.5 1.5
Center wave-length tolerance nm ± 4 ± 5 ± 5 ± 5
Emitter size μm 150 150 150 150
Spectral width (FWHM) nm < 3 < 3 < 3 < 3
Slope efficiency W / A > 1 > 1 > 1 > 1 
Polarization TM or TE TM TE TE TE
Fast-axis divergence Degrees 42° 43° 43° 43°
Slow-axis divergence Degrees 10° 10° 10°  10°
Wavelength temperature coefficient1 nm / °C 0.15 0.15 0.15 0.15
Electrical
Total conversion efficiency % 20 25 25  25
Threshold current (ITH) mA 700 660 668 680
Operating current (IOP) mA 1500 1900 1900  1900
Operating voltage (VOP) V 2.2 2.08 2.08 2.08
Series resistance (RS) Ω 0.15 0.1 0.1 0.1
Mechanical
Lead soldering temperature
(C-mount)		 °C 150
(< 5 sec)		 150
(< 5 sec)		 150
(< 5 sec)		 150
(< 5 sec)
Lead soldering temp. (HHL) °C 250
(< 5 sec)		 250
(< 5 sec)		 250
(< 5 sec)		 250
(< 5 sec)
Thermal
Thermal resistance2 °C / W 10 10 10 10
Operating tem-perature range
(C-mount)3		 °C -20 to +30 -20 to +30 -20 to +30 -20 to +30
Operating tem-perature range (HHL)3 °C -20 to +50 -20 to +50 -20 to +50 -20 to +50
Storage tem-perature range3 °C -20 to +80 -20 to +80 -20 to +80 -20 to +80
Thermoelectric cooler (HHL only)
Drive current (Typical) A 1.7 1.7 1.7 1.7
Drive voltage (Typical) V 3.5 3.5 3.5 3.5
Thermistor re-sistance (25 °C) kΩ 10  10 10 10
Monitor photodiode (HHL only)
Sensitivity µA/mW 1 to 10 1 to 10 1 to 10 1 to 10
Capacitance pF 6 6 6 6
Breakdown voltage V 25 25 25 25
Operating voltage V 10 10 10  10

1 The wavelength temperature coefficient is the wavelength shift per °C change at the diode junction.
2 Thermal resistance is the diode junction temperature shift per incremental Watt of heat load.
3 A non-condensing environment is required for storage and operation below ambient dew point.

 

 

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